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Tuesday 9 September 2014

DDR4—Packing Power and Performance into a New Generation


DDR4, which is to launch shortly, is the newest iteration in DRAM, loaded with new features that improve reliability, speed, power, and stacking capabilities for the enterprise, micro-server, ultra-thin, and tablet markets. With data rates reaching 2400 Mb/s, DDR4 increases performance up to 50% over DDR3. DDR4 also delivers a 20% reduction in voltage over DDR3—however, when DDR4’s additional power-saving features are taken into account, total overall power savings versus DDR3 can be as much as 35%.

The new boundary scan feature (also known as JTAG) enables early fault detection during testing, thereby reducing debug time, improving system reliability, and ultimately, saving development and production costs.

Advantages of DDR4 RAM over DDR3 RAM:
  • Improved performance—up to 50% higher than DDR3
  • Improved power consumption—up to 35% lower than DDR3
  • Higher data rates—2400 MT/s at introduction
  • Faster burst accesses
  • Improved data signal integrity
  • Higher-capacity memory subsystem, with up to 8-die stacking
  • Early fault detection and improved system reliability through JTAG

For more technical advantages have a look at http://www.micron.com/products/dram/ddr3-to-ddr4

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